2SB1386 R(180-390)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1132 TRANSISTOR (PNP) SOT-89-3L FEATURES z Low VCE(sat) z Compliments 2SD1664 1. BASE 2. COLLECTOR 2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Continuous Collector Current -1 A ICP Pulsed Collector Current -2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 1 3. EMITTER 3 6LQJOHSXOVH,3: PV ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 μA DC current gain hFE VCE=-3V,IC=-100mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob 82 390 IC=-500mA,IB=-50mA -0.2 VCE=-5V,IC=-50mA,f=30MHz 150 VCB=-10V,IE=0,f=1MHz 20 -0.5 V MHz 30 pF CLASSIFICATION OF hFE Rank Range Marking P Q R 82-180 120-270 180-390 BAP BAQ BAR B,Dec,2011 Typical Characteristics (mA) —— VCE IC -3.5mA -3mA -2.5mA -2mA -400 Ta=100℃ DC CURRENT GAIN IC -4.5mA -4mA -600 —— COMMON EMITTER Ta=25℃ -5mA -800 COLLECTOR CURRENT hFE 1000 hFE IC -1000 2SB1132 -1.5mA Ta=25℃ 100 -1mA -200 IB=-0.5mA COMMON EMITTER VCE=-3V -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat —— IC Ta=100 ℃ Ta=25℃ β=10 -10 -10 -100 COLLECTOR CURRENT IC -1000 —— IC -1000 IC (mA) IC Ta=25℃ -750 Ta=100 ℃ β=10 -500 -1 -1000 -10 -100 COLLECTOR CURRENT (mA) fT VBE —— IC -1000 (mA) IC IC fT (mA) (MHz) 300 T =1 00 ℃ a T =2 5℃ a 100 TRANSITION FREQUENCY -100 -10 COMMON EMITTER VCE=-6V COMMON EMITTER VCE=-5V Ta=25℃ 10 -1 -0 -300 -600 -900 -1 -1200 -10 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) PC 600 f=1MHz IE=0/IC=0 Ta=25 ℃ Cib -100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) Cob C CAPACITANCE -100 VBEsat —— -1000 -100 -1 -10 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1 VCE (V) -400 COLLECTOR CURRENT 10 -20 10 —— IC (mA) Ta 500 400 300 200 100 1 -0.1 0 -1 REVERSE VOLTAGE -10 V (V) -20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 B,Dec,2011